Korean Solid State Drive manufacturer Mtron has announced its next generation control technology, capable of handling data rates up to 260MB/s. The key was to double the amount of data channels from 4 to 8, which allowed them to achieve a maximum read/write speed of 260/240MB/s (with SLC NAND chips) and random write IOPS of 8,000(4KB). Mtron will announce products using the new control technology early next year.
Steve Jeon, CEO of Mtron, said, “This new controller provides not only improved performance, but also it provides high stability and reliability by minimizing errors and instability that a typical flash memory chip has. Based on the superb technology from our 1st generation controller, Mtron will lead the next generation controller industry with the latest technology.”
