Solid State Drives need NAND flash memory circuits to work, and quite a lot of them. Samsung which was one of the first to launch retail SSDs is now preparing the second phase of its SSD venture by upgrading its 200mm (8″) plant in Austin, Texas. The plant that today makes DRAM circuits on 200mm wafers will be upgraded to 300mm wafers where focus will be shifted from DRAM to NAND.
The idea is to increase NAND flash circuit production in the second half of 2010, which means that the plant will close in October for the start of the upgrade process.
Samsung that today makes NAND flash circuit with 42nm technology needs to improve its development to catch up to Intel that together with Micron equips their SSDs with 34nm memory chips.
Samsung is still winning in terms of quantity but Toshiba that at the moment is shipping the second most NAND flash circuits is gaining. Either way, Samsung has great faith in NAND flash memory and the future looks bright for the Solid State Drive market.
