Samsung continues to lead the NAND flash market forward and it has now announced that the first 32Gb chip made with 40nm technology has been manufactured. The new 32Gb chip use a new architecture to optimize the manufacturing efficiency and increase the performance in a major way. The technology is called Charge Trap Flash (CTF) and use a quite simple structure which makes the control port of the chip considerably smaller than the current Floating Gate architecture which was brought forward by Toshiba already in 1989. This makes it possible to further improve the manufacturing process even further and Samsung is already talking about 30nm and 20nm chips.
The new 32Gb NAND flash memory chips can be used in memory cards with a storage capacity up to 64GB (!), a quite massive storage capacity for being a Solid State memory. Samsung says that it can scale the new CTF NAND flash circuits down to 20nm and 256Gb which should make it possible to create really massive storages with NAND flash memory. Something we need to make Solid State harddrives a serious alternative on the retail market.
