Samsung lanserar första 40nm DRAM kretsen

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Samsung har meddelat att man fortsatt att förfina sin minnestillverkningsteknik och nu släppt de första DRAM minneskretsarna på marknaden tillverkade med 40nm teknik. Den nya 1Gbit DDR2 kretsen ska bland annat användas på nya minnesmoduler för bärbara datorer. Samsung har redan presenterat en SODIMM på 1GB som ska användas på Intels mobila styrkrets GM45 Express. Nästa steg för Samsung är att använda 40nm tekniken till en 2Gb DDR3 krets som ska börja tillverkas under slutet av 2009.


Läs mer i Samsungs pressmeddelande;



Samsung Announces First Validated 40-nanometer Class DRAM


Samsung Electronics announced today that it has developed and validated the first 40-nanometer (nm) class DRAM chip and module. This new 1-Gigabit DDR2 component (x8) and a corresponding 1-Gigabyte 800Mbps (Megabits per second) DDR2 SODIMM (small outline DRAM inline memory module) – both to be processed at 40-nm – have been certified in the Intel Platform Validation program for use with the Intel GM45 series Express mobile chipsets.
“Securing extremely advanced technology and system/platform validated operability underscores our commitment as technology leader to deploying the most efficient means of producing DRAM in the marketplace,” said Kevin Lee, vice president, technical marketing, Samsung Semiconductor, Inc.





The migration to 40-nm class process technology is expected to accelerate the time-to-market cycle by 50 percent – to just one year. Samsung plans to apply its 40-nm class technology to also develop a 2Gb DDR3 device for mass production by the end of 2009.

The new 40-nm class process technology will drive further reductions in voltage against a 50-nm class device, which Samsung expects to translate into about a 30 percent power savings

The finer DRAM technology node also delivers an approximately 60 percent increase in productivity over 50-nm class process technology.

In addition, Samsung expects that its 40-nm process node will mark a significant step toward the development of next generation, ultra-high performance DRAM technologies such as DDR4.

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