Memory manufacturer Samsung recently presented a new memory technology that will make it possible to manufacture 1 terabit flash chips by using today’s memory circuits in a new 3D design. It expands the memory chip’s storage density by stacking several memory circuits on top of each other, thus increasing the memory capacity, while the surface remains the same. Samsung’s new approach will make it possible to create Solid State units with considerably higher storage capacity, but still have the same format as today. So far the technology is still in its prototype stage, but Samsung points out that it hopes to commercialize the technology very soon as it’s essentially based on regular 2D storage.
“Essentially, a single layer of flash is analogous to a parking lot: electrons fill up memory cells much as cars fill up parking spots. Adding another layer of silicon increases the data capacity just as a two-story parking garage can hold more cars than a one-story parking garage can.”
