It’s becoming all the more tricky to shrink the size of the transistors used in our silicon chips. To secure a stready development the world’s largest semiconductor manufacturers have decided to join forces and Intel, Samsung and Toshiba have signed a treaty. The companies will cooperate on reasearch and development toward a new 10nm technology.
The joint venture will start soon and include another ten or so companies that was invited by the trio to help in devellopment research on the future of semiconductor manufacturing.
The idea is to have the new 10 nm technology ready in 2016 when Samsung and Toshiba aims to use the technology for making NAND flash circuits while Intel is planning to use it for making microprocessors. A transistor made at 10nm is 100,000 times thinner than a normal strain of hair.
According to a report published by Nikkei Daily the Japanese ministry of trade and industry invest 5 billion yen of the 10 billion yen that will be required to get the research and development started. The remaining 5 billion yen will come from the participating companies.
Intel Sandy Bridge will be made with 32nm technology
