Samsung, a pioneer in flash memory development, has announced the world’s first 64 Gb (8 GB) MLC (Multi-Level Cell) NAND flash memory chip. The chip was made using a state of the art 30nm manufacturing process, and using only 16 chips you would be able to create a 128 GB solid state harddrive at an almost fair price. The secret behind this new chip is a technology called SaDPT (Self-aligned Double Patterning Technology).
“In SaDPT, the 1st pattern transfer is a wider-spaced circuit design of the target process technology, while the 2nd pattern transfer fills in the spaced area with a more closely designed pattern.”
“SaDPT represents a pivotal advancement beyond the charge trap flash (CTF) technology that Samsung developed for NAND flash last year when it introduced a new material (silicon nitride) and a new structural configuration. SaDPT resolves a critical bottleneck to forming sub-30nm circuitry by expanding the role that conventional lithography technology plays in the manufacturing process. Both Samsung’s CTF-based NAND flash technology and SaDPT are expected to provide improvements in cost efficiency for next-generation nanometer-scale designs.”
