Toshiba is one of few actors on the SSD market that develops both memory circuits and controllers. The semiconductor manufacturer has now announced production start of the first NAND flash memory circuits with 24nm technology, trumping Intel’s 25nm technology.

Toshiba uses its new tech to pump out 64-gigabit circuits that can store 2 bit-per-cell. These circuits can be used to reach record densities of 8GB on a single memory chip. A memory chip that also supports Toshiba’s Toggle DDR for higher transfer rates.

The next step for Toshiba is to use the new and more efficient technology on 32-gigabit circuits and 3 bit-per-cell solutions that stores 50% more data on a given surface.

The new circuits are expected to appear in everything from smartphones to tablets and SSDs.

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